A Transmission Electron Microscopy Study on Self-Catalyzed GaAs Nanostructures
نویسندگان
چکیده
Semiconductor nanostructures are potential building blocks for many applications in photonics, electronics, physics, and life sciences. They are also a good candidate to study quantum mechanics and related novel phenomena, based on the dimensionality and the size reduction. Among various nanostructures, one-dimensional (1-D) III-V nanostructures grown on Si substrates have received a lot of attention, due to the excellent physical properties of being a direct bandgap, combined with the wellestablished Si technology [1].
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